女生自摸在线观看一区二区三区-欧美日韩一区二区内射-女人张开腿让男生桶个爽-欧美中文字幕一区在线

雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NGW50T65H3DFP

650 V, 50 A trench field-stop IGBT with full rated silicon diode

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.

Features

  • Device current is rated at 50 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • HV-H3TRB qualified

Applications

  • Power inverters such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Power Factor Correction (PFC)

  • Induction heating

  • Welding

參數(shù)類型

型號(hào) Product status VCE [max] (V) IC [typ] (A) Configuration Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW50T65H3DFP Production 650 50 HS -40 175 SOT429-2 TO-247-3L

封裝

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
NGW50T65H3DFP NGW50T65H3DFPQ
(934668244127)
Active W50T65H3DFP SOT429-2
TO-247-3L
(SOT429-2)
SOT429-2 SOT429-2_127

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
NGW50T65H3DFP NGW50T65H3DFPQ NGW50T65H3DFP rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類型 日期
NGW50T65H3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-03-03
AN90042 Nexperia 650 V (G3) IGBT product introduction Application note 2025-03-06
SOT429-2 SOT429-2.step Design support 2024-11-22
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03
NGW50T65H3DFP_L1 NGW50T65H3DFP SPICE model SPICE model 2024-12-06

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
SOT429-2 SOT429-2.step Design support 2024-11-22
NGW50T65H3DFP_L1 NGW50T65H3DFP SPICE model SPICE model 2024-12-06

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購(gòu)買
NGW50T65H3DFP NGW50T65H3DFPQ 934668244127 Active SOT429-2_127 450 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過(guò)我們的銷售機(jī)構(gòu)訂購(gòu)樣品。

如果您沒(méi)有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷商處購(gòu)買
NGW50T65H3DFP NGW50T65H3DFPQ 934668244127 SOT429-2 訂單產(chǎn)品
济源市| 东阿县| 孙吴县| 临邑县| 江口县| 广昌县| 卢龙县| 静宁县| 德安县| 焉耆| 玉林市| 营山县| 铁岭市| 兴安县| 沧州市| 莱西市| 汉中市| 宝山区| 汨罗市| 习水县| 三都| 黎川县| 大足县| 玉门市| 玛纳斯县| 吉水县| 青岛市| 进贤县| 屏南县| 太湖县| 西华县| 天全县| 普宁市| 崇仁县| 安徽省| 闸北区| 左云县| 若尔盖县| 青川县| 夏邑县| 托克托县|