外形圖
| 封裝版本 | 封裝名稱(chēng) | 封裝說(shuō)明 | 參考 | 發(fā)行日期 |
|---|---|---|---|---|
| SOT429-2 | TO-247-3L | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | 2022-02-08 |
相關(guān)文檔
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
采用此封裝的產(chǎn)品
IGBT discretes
| 型號(hào) | 描述 | 快速訪問(wèn) |
|---|---|---|
| NGW40T65M3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | |
| NGW60T65M3DFP | 650 V, 60 A trench field-stop IGBT with full rated silicon diode | |
| NGW50T65M3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | |
| NGW40T65H3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | |
| NGW75T65M3DFP | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | |
| NGW30T65M3DFP | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | |
| NGW40T65H3DHP | 650 V, 40 A trench field-stop IGBT with half rated silicon diode | |
| NGW75T65H3DFP | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | |
| NGW50T65H3DFP | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | |
| NGW75T65H3DF | IGBT with trench construction, fast recovery diode |
SiC MOSFETs
| 型號(hào) | 描述 | 快速訪問(wèn) |
|---|---|---|
| NSF030120L3A0 | 1200 V, 30 m?, N-channel SiC MOSFET | |
| NSF060120L3A0 | 1200 V, 60 mΩ, N-channel SiC MOSFET | |
| NSF080120L3A0 | 1200 V, 80 mΩ, N-channel SiC MOSFET | |
| NSF040120L3A0 | 1200 V, 40 m?, N-channel SiC MOSFET |