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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NGW75T65H3DF

IGBT with trench construction, fast recovery diode

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.

Features

  • Device current is rated at 75 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • HV-H3TRB qualified

Applications

  • Power inverters such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Power Factor Correction (PFC)

  • Induction heating

  • Welding

參數(shù)類(lèi)型

型號(hào) Product status VCE [max] (V) IC [typ] (A) Configuration Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW75T65H3DF Production 650 75 HS -40 175 SOT429-2 TO-247-3L

封裝

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
NGW75T65H3DF NGW75T65H3DFQ
(934665504127)
Active W75T65H3DF SOT429-2
TO-247-3L
(SOT429-2)
SOT429-2 SOT429-2_127

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
NGW75T65H3DF NGW75T65H3DFQ NGW75T65H3DF rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱 標(biāo)題 類(lèi)型 日期
NGW75T65H3DF 650 V, 75 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-02-28
AN90042 Nexperia 650 V (G3) IGBT product introduction Application note 2025-03-06
SOT429-2 SOT429-2.step Design support 2024-11-22
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03
NGW75T65H3DF_L1 NGW75T65H3DF SPICE model SPICE model 2024-12-06

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類(lèi)型 日期
SOT429-2 SOT429-2.step Design support 2024-11-22
NGW75T65H3DF_L1 NGW75T65H3DF SPICE model SPICE model 2024-12-06

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購(gòu)買(mǎi)
NGW75T65H3DF NGW75T65H3DFQ 934665504127 Active SOT429-2_127 450 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。

如果您沒(méi)有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi)
NGW75T65H3DF NGW75T65H3DFQ 934665504127 SOT429-2 訂單產(chǎn)品
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