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Click here for more informationPMZ350XN
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
此產(chǎn)品已停產(chǎn)
Alternatives
Features and benefits
- Low conduction losses due to low on-state resistance
- Saves PCB space due to small footprint (90 % smaller than SOT23)
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use in compact designs due to low profile (55 % lower than SOT23)
Applications
- Driver circuits
- Switching in portable appliances
參數(shù)類型
| 型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMZ350XN | SOT883 | DFN1006-3 | End of life | N | 1 | 30 | 12 | 420 | 650 | 150 | 1.87 | 0.18 | 0.65 | 2.5 | 1 | N | 37 | 8.6 | 2011-01-24 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMZ350XN | PMZ350XN,315 (934060154315) |
Obsolete | Z6 N/A N/A |
DFN1006-3 (SOT883) |
SOT883 |
REFLOW_BG-BD-1
|
SOT883_315 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMZ350XN | PMZ350XN,315 | PMZ350XN |
|
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文檔 (16)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMZ350XN | N-channel TrenchMOS standard level FET | Data sheet | 2008-02-20 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN1006-3_SOT883_mk | plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Marcom graphics | 2017-01-28 |
| SOT883 | plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body | Package information | 2022-05-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMZ350XN_10_08_2011 | PMZ350XN_10_08_2011 Spice parameter | SPICE model | 2011-09-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMZ350XN_10_08_2011 | PMZ350XN_10_08_2011 Spice parameter | SPICE model | 2011-09-13 |
| SOT883 | 3D model for products with SOT883 package | Design support | 2020-01-22 |
PMZ350XN
N-channel TrenchMOS standard level FET
從安世半導(dǎo)體購(gòu)買
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
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