女生自摸在线观看一区二区三区-欧美日韩一区二区内射-女人张开腿让男生桶个爽-欧美中文字幕一区在线

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PSMN1R1-50SLH

N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 280 Amp continuous current capability

  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection

  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating

  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types

  • Qualified to 175 °C

  • Avalanche rated, 100 % tested

  • Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

  • Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

  • Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

  • Narrow VGS(th) rating for easy paralleling and improved current sharing

  • Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Applications

  • Brushless DC motor control

  • Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

  • Battery protection and Battery Management Systems (BMS)

  • Load switch

  • 10 cell lithium-ion battery applications (36 V ? 42 V)

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R1-50SLH SOT1235 LFPAK88 End of life N 1 50 1.18 175 280 20 86 190 375 1.78 N 13338 1276 2021-01-08

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PSMN1R1-50SLH PSMN1R1-50SLHX
(934661301115)
Obsolete X1H1L50S SOT1235
LFPAK88
(SOT1235)
SOT1235 REFLOW_BG-BD-1
暫無信息
PSMN1R1-50SLHAX
(934661301118)
Obsolete X1H1L50S SOT1235_118

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PSMN1R1-50SLH PSMN1R1-50SLHX PSMN1R1-50SLH rohs rhf
PSMN1R1-50SLH PSMN1R1-50SLHAX PSMN1R1-50SLH rohs rhf
品質(zhì)及可靠性免責聲明

文檔 (8)

文件名稱 標題 類型 日期
PSMN1R1-50SLH N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology Data sheet 2021-01-08
AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK88_sot1235_mk plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Marcom graphics 2019-04-10
SOT1235 plastic, single-ended surface-mounted package (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22
SOT1235 3D model for products with SOT1235 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

金堂县| 东光县| 金塔县| 疏附县| 常德市| 溧水县| 蚌埠市| 永嘉县| 景德镇市| 凤山县| 丰台区| 静乐县| 图木舒克市| 南昌市| 平泉县| 剑河县| 蚌埠市| 静海县| 通山县| 通辽市| 娱乐| 庆云县| 阜城县| 金塔县| 伊金霍洛旗| 台东市| 盱眙县| 冕宁县| 景东| 常山县| 泸西县| 新宾| 清水河县| 白玉县| 洛南县| 武义县| 哈尔滨市| 卢氏县| 枞阳县| 博罗县| 民县|