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50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Applications
- Dual low power switches (e.g. motors, fans)
- Automotive
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (PNP) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5350SS | SOT96-1 | SO8 | 4.9 x 3.9 x 1.75 | End of life | PNP | 2 | 1200.0 | -50.0 | -2.7 | -370.0 | 140.0 | 200.0 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5350SS | PBSS5350SS,115 (934061032115) |
Obsolete | OBS 5350SS |
SO8 (SOT96-1) |
SOT96-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT96-1_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5350SS | PBSS5350SS,115 | PBSS5350SS |
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文檔 (11)
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350SS | 50 V, 2.7 A PNP/PNP low V_CEsat (BISS) transistor | Data sheet | 2018-08-28 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO8_SOT96-1_mk | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT96-1 | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Package information | 2020-04-21 |
| PBSS5350SS_Nexperia_Product_Quality | PBSS5350SS Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS5350SS_Nexperia_Product_Reliability | PBSS5350SS Nexperia Product Reliability | Quality document | 2019-04-29 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| PBSS5350SS | PBSS5350SS SPICE model | SPICE model | 2024-08-27 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
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模型
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350SS | PBSS5350SS SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
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