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Click here for more informationPBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (PNP) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] | fT [typ] (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5112PAP | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | End of life | PNP | 2 | 1040.0 | -120.0 | -1.0 | -480.0 | 440.0 | 190.0 | 100.0 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5112PAP | PBSS5112PAP,115 (934066894115) |
Discontinued / End-of-life | 2S |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5112PAP | PBSS5112PAP,115 | PBSS5112PAP |
|
|
Series
文檔 (8)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | Data sheet | 2017-05-29 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| PBSS5112PAP_Nexperia_Product_Reliability | PBSS5112PAP Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5112PAP | PBSS5112PAP SPICE model | SPICE model | 2024-08-27 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5112PAP | PBSS5112PAP SPICE model | SPICE model | 2024-08-27 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
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