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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AXP1G58GS

Low-power configurable multiple function gate

The 74AXP1G58 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected directly to VCC or GND.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.7 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1000 V

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10% of VCC

  • IOFF circuitry provides partial power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號(hào) VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C)
74AXP1G58GS 0.7?-?2.75 CMOS ± 4.5 4.5 70 1 ultra low -40~85

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP1G58GS 74AXP1G58GSH
(935301602125)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AXP1G58GS 74AXP1G58GSH 74AXP1G58GS rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
74AXP1G58 Low-power configurable multiple function gate Data sheet 2021-10-07
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
AXP_banner3 Low-power configurable multiple function gate Marcom graphics 2013-06-25
74AXP1G58GS_Nexperia_Product_Reliability 74AXP1G58GS Nexperia Product Reliability Quality document 2022-05-04

支持

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模型

文件名稱 標(biāo)題 類型 日期
axp1g58 74AXP1G58 IBIS model IBIS model 2015-09-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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