女生自摸在线观看一区二区三区-欧美日韩一区二区内射-女人张开腿让男生桶个爽-欧美中文字幕一区在线

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AXP1G11GM

Low-power 3-input AND gate

The 74AXP1G11 is a single 3-input AND gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V
  • Low input capacitance; CI = 0.5 pF (typical)
  • Low output capacitance; CO = 1.0 pF (typical)
  • Low dynamic power consumption; CPD = 2.6 pF at VCC = 1.2 V (typical)
  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)
  • High noise immunity
  • Complies with JEDEC standard:
    • JESD8-12A.01 (1.1 V to 1.3 V)
    • JESD8-11A.01 (1.4 V to 1.6 V)
    • JESD8-7A (1.65 V to 1.95 V)
    • JESD8-5A.01 (2.3 V to 2.7 V)
  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
    • CDM JESD22-C101E exceeds 1000 V
  • Latch-up performance exceeds 100 mA per JESD 78 Class II
  • Inputs accept voltages up to 2.75 V
  • Low noise overshoot and undershoot < 10 % of VCC
  • IOFF circuitry provides partial Power-down mode operation
  • Multiple package options
  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C)
74AXP1G11GM 0.7?-?2.75 CMOS ± 4.5 2.6 70 1 ultra low -40~85

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP1G11GM 74AXP1G11GMH
(935306453125)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AXP1G11GM 74AXP1G11GMH 74AXP1G11GM rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (4)

文件名稱 標題 類型 日期
74AXP1G11 Low-power 3-input AND gate Data sheet 2017-03-30
axp1g11 74AXP1G11 IBIS model IBIS model 2015-10-01
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
74AXP1G11GM_Nexperia_Product_Reliability 74AXP1G11GM Nexperia Product Reliability Quality document 2022-05-04

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
axp1g11 74AXP1G11 IBIS model IBIS model 2015-10-01

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

辽宁省| 余姚市| 托克托县| 临潭县| 盐山县| 汾西县| 武川县| 泽库县| 凭祥市| 龙南县| 兴隆县| 抚远县| 通山县| 临城县| 喜德县| 本溪市| 苍梧县| 五常市| 防城港市| 舟山市| 隆德县| 福州市| 渭南市| 都昌县| 岗巴县| 天台县| 宾阳县| 织金县| 呼图壁县| 华容县| 屏山县| 叙永县| 长治县| 顺平县| 石景山区| 蒙城县| 兴安县| 新化县| 新龙县| 洪雅县| 榆中县|