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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HCT165DB

8-bit parallel-in/serial out shift register

The 74HC165; 74HCT165 are 8-bit serial or parallel-in/serial-out shift registers. The device features a serial data input (DS), eight parallel data inputs (D0 to D7) and two complementary serial outputs (Q7 and Q7). When the parallel load input (PL) is LOW the data from D0 to D7 is loaded into the shift register asynchronously. When PL is HIGH data enters the register serially at DS. When the clock enable input (CE) is LOW data is shifted on the LOW-to-HIGH transitions of the CP input. A HIGH on CE will disable the CP input. Inputs are overvoltage tolerant to 15 V. This enables the device to be used in HIGH-to-LOW level shifting applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Asynchronous 8-bit parallel load

  • Synchronous serial input

  • Input levels:

    • For 74HC165: CMOS level

    • For 74HCT165: TTL level

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Applications

  • Parallel-to-serial data conversion

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HCT165DB 74HCT165DB,112
(935190350112)
Obsolete no package information
74HCT165DB,118
(935190350118)
Obsolete

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HCT165DB 74HCT165DB,112 74HCT165DB rohs rhf rhf
74HCT165DB 74HCT165DB,118 74HCT165DB rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (4)

文件名稱 標(biāo)題 類型 日期
74HC_HCT165 8-bit parallel-in/serial out shift register Data sheet 2024-05-30
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
hct165 74HCT165 IBIS model IBIS model 2015-09-14
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31

支持

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模型

文件名稱 標(biāo)題 類型 日期
hct165 74HCT165 IBIS model IBIS model 2015-09-14

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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