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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74LVTN16245BBX

3.3 V 16-bit transceiver; 3-state

The 74LVTN16245B is a high-performance BiCMOS product designed for VCC operation at 3.3 V.

This device is a 16-bit transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The control function implementation minimizes external timing requirements. The device features an output enable input (nOE) for easy cascading and a direction input (nDIR) for direction control.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 16-bit bus interface

  • 3-state buffers

  • Output capability: +64 mA and -32 mA

  • TTL input and output switching levels

  • Input and output interface capability to systems at 5 V supply

  • Power-up 3-state

  • Live insertion and extraction permitted

  • No bus current loading when output is tied to 5 V bus

  • Latch-up protection

    • JESD78B Class II exceeds 500 mA

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 Package name
74LVTN16245BBX HXQFN60U

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVTN16245BBX 74LVTN16245BBX,518
(935295883518)
Obsolete LVTN16245B Standard Procedure Standard Procedure no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVTN16245BBX 74LVTN16245BBX,518 74LVTN16245BBX rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (2)

文件名稱 標題 類型 日期
74LVTN16245B 3.3 V 16-bit transceiver; 3-state Data sheet 2024-07-08
lvtn16245b lvtn16245b IBIS model IBIS model 2013-04-09

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
lvtn16245b lvtn16245b IBIS model IBIS model 2013-04-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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