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30 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Low threshold voltage
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB09R1XN | SOT1220-2 | DFN2020M-6 | Production | N | 1 | 30 | 12 | 11.2 | 14.3 | 150 | 13 | 1.9 | 8.1 | 1.5 | 0.65 | N | 940 | 156 | 2022-10-24 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMPB09R1XN | PMPB09R1XNX (934665236115) |
Discontinued / End-of-life | ZV |
DFN2020M-6 (SOT1220-2) |
SOT1220-2 | SOT1220-2_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMPB09R1XN | PMPB09R1XNX | PMPB09R1XN |
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Series
文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB09R1XN | 30 V, N-channel Trench MOSFET | Data sheet | 2022-10-24 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
| PMPB09R1XN | PMPB09R1XN SPICE model | SPICE model | 2022-11-14 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PMPB09R1XN | PMPB09R1XN SPICE model | SPICE model | 2022-11-14 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMPB09R1XN
30 V, N-channel Trench MOSFET
從安世半導(dǎo)體購買
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