外形圖
| 封裝版本 | 封裝名稱 | 封裝說(shuō)明 | 參考 | 發(fā)行日期 |
|---|---|---|---|---|
| SOT1220-2 | DFN2020M-6 | plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm | 2020-04-01 |
相關(guān)文檔
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
| SOT1220-2_115 | DFN2020M-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2021-06-10 |
| SOT1220-2_125 | DFN2020M-6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2023-04-25 |
采用此封裝的產(chǎn)品
MOSFETs
| 型號(hào) | 描述 | 快速訪問(wèn) |
|---|---|---|
| PMPB12R7EP | 30 V, P-channel Trench MOSFET | |
| PMPB07R3EN | 30 V, N-channel Trench MOSFET | |
| PMPB17EP | 30 V, P-channel Trench MOSFET | |
| PSMN071-100NSE | N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | |
| PMPB10R3XN | 30 V, N-channel Trench MOSFET | |
| PSMN047-100NSE | N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | |
| PMPB50XN | 110 V, N-channel Trench MOSFET |