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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMPB08R6EN

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Logic-level compatible

  • Very fast switching

  • Trench Superjunction Technology

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

Applications

  • Relay driver

  • High-speed line driver

  • Low-side load switch

  • Switching circuits

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMPB08R6EN SOT1220-2 DFN2020M-6 Production N 1 30 20 10.5 14 150 15 1.7 13.7 1.9 1.5 N 840 155 2020-10-13

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMPB08R6EN PMPB08R6ENX
(934661978115)
Discontinued / End-of-life ZB SOT1220-2
DFN2020M-6
(SOT1220-2)
SOT1220-2 SOT1220-2_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMPB08R6EN PMPB08R6ENX PMPB08R6EN rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (9)

文件名稱 標(biāo)題 類型 日期
PMPB08R6EN 30 V, N-channel Trench MOSFET Data sheet 2020-10-13
AN11119 Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN90017 Load switches for mobile and computing applications Application note 2020-09-02
AN90023 Thermal performance of DFN packages Application note 2020-11-23
SOT1220-2 3D model for products with SOT1220-2 package Design support 2023-02-02
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 適合移動(dòng)和便攜式設(shè)備的 大批量小信號(hào)MOSFET, 采用WLCSP和無引腳DFN封裝 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
SOT1220-2 plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm Package information 2020-06-17
PMPB08R6EN PMPB08R6EN SPICE model SPICE model 2021-01-22

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PMPB08R6EN PMPB08R6EN SPICE model SPICE model 2021-01-22
SOT1220-2 3D model for products with SOT1220-2 package Design support 2023-02-02

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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