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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PTVS12VZ1USKN

Transient voltage suppressor in DSN1608-2 for mobile applications

Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Rated peak pulse current: IPPM = 65 A (8/20 μs pulse)
  • Rated peak pulse power: PPPM = 2100 W (8/20 μs pulse)
  • Dynamic resistance Rdyn = 0.1 ?
  • Reverse current: IRM = 1 nA
  • Very low package height: 0.25 mm

Applications

  • Power supply protection
  • Industrial application
  • Power management

參數(shù)類型

型號 Package name
PTVS12VZ1USKN DSN1608-2

文檔

No documents available

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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