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20 V, single P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- 3 kV ESD protected
- Trench MOSFET technology
- Low threshold voltage
Applications
- Relay driver
- High-side loadswitch
- Switching circuits
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMN50UPE | SOT457 | TSOP6 | End of life | P | 1 | -20 | 8 | 66 | 81 | 150 | -4 | 2.7 | 10.5 | 0.51 | -0.6 | N | 24 | 106 | 2012-08-14 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMN50UPE | PMN50UPE,115 (934067141115) |
Obsolete | WH empty empty |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
文檔 (17)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMN50UPE | 20 V, single P-channel Trench MOSFET | Data sheet | 2012-07-20 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PMN50UPE_09_07_2012 | PMN50UPE Spice model | SPICE model | 2013-12-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMN50UPE_09_07_2012 | PMN50UPE Spice model | SPICE model | 2013-12-13 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMN50UPE
20 V, single P-channel Trench MOSFET
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