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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

PESD5V0F5UF

Femtofarad unidirectional fivefold ESD protection array

Femtofarad capacitance unidirectional ElectroStatic Discharge (ESD) protection diode array designed to protect up to five signal lines from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1410-6 (SOT886) Surface-Mounted Device (SMD) plastic package.

The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • ESD protection of up to 5 lines
  • Low diode capacitance Cd = 0.55 pF
  • Ultra low leakage current IRM < 1 nA
  • ESD protection up to 8 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPPM = 2 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • 10/100/1000 Mbit/s Ethernet
  • Communication systems
  • Portable electronics
  • SIM card protection
  • High-speed data lines

文檔

No documents available

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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