可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | SOT8092-1 | 訂單產品 |
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Click here for more informationGANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANB1R2-040QBA is a 40 V, 1.2 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high frequency switching capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High-side load switch
OVP protection in smart phone USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
參數類型
| 型號 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Ciss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | SOT8092-1 | VQFN16 | Production | 1 | 40 | 125 | 32 | 105 | N | 3500 | 2024-09-17 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ (934667629336) |
Active | 1R2AQBA |
VQFN16 (SOT8092-1) |
SOT8092-1 | 暫無信息 |
文檔 (2)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| GANB1R2-040QBA | 40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2025-03-12 |
| SOT8092-1 | VQFN16: very thin quad flatpack; no leads; 6 mm x 4 mm x 0.85 mm body | Package information | 2025-02-05 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
No documents available
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| GANB1R2-040QBA | GANB1R2-040QBAZ | 934667629336 | Active | 暫無信息 | 2,500 | 訂單產品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB1R2-040QBA
40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
從安世半導體購買
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