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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

CBTD3861PW

10-bit level shifting bus switch with output enable

The CBTD3861 provides ten bits of high-speed TTL-compatible bus switching. The low ON resistance of the switch allows connections to be made with minimal propagation delay.

The CBTD3861 device is organized as one 10-bit bus switches with one output enable (OE) input. When OE is LOW, the switch is on and port A is connected to the B port. When OE is HIGH, each switch is disabled.

The CBTD3861 is characterized for operation from -40 ℃ to +85 ℃.

此產品已停產

Features and benefits

  • Designed to be used in 5 V to 3.3 V level shifting applications with internal diode

  • 5 ? switch connection between two ports

  • TTL-compatible control input levels

  • Latch-up protection exceeds 100 mA per JESD78

  • ESD protection:

    • HBM JESD22-A114F exceeds 2000 V

    • CDM JESD22-C101C exceeds 1000 V

Applications

參數(shù)類型

型號 VCC (V) VPASS (V) Logic switching levels RON (Ω) f(-3dB) (MHz) Nr of bits tpd (ns) Power dissipation considerations Tamb (°C)
CBTD3861PW 4.5?-?5.5 3.3 TTL 7 300 10 0.25 very low -40~85

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
CBTD3861PW CBTD3861PW,118
(935291686118)
Obsolete no package information

環(huán)境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
CBTD3861PW CBTD3861PW,118 CBTD3861PW rohs rhf rhf
品質及可靠性免責聲明

Series

文檔 (2)

文件名稱 標題 類型 日期
CBTD3861 10-bit level shifting bus switch with output enable Data sheet 2019-03-06
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28

支持

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模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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