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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVT16500ADGG

3.3 V 18-bit universal bus transceiver; 3-state

The 74LVT16500A is a high-performance BiCMOS product designed for VCC operation at 3.3 V.

This device is an 18-bit universal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. Data flow in each direction is controlled by output enable (OEAB and OEBA), latch enable (LEAB and LEBA), and clock (CPAB and CPBA) inputs. For A-to-B data flow, the device operates in the transparent mode when LEAB is HIGH. When LEAB is LOW, the A data is latched if CPAB is held at a HIGH or LOW logic level. If LEAB is LOW, the A-bus data is stored in the latch/flip-flop on the HIGH-to-LOW transition of CPAB. When OEAB is HIGH, the outputs are active. When OEAB is LOW, the outputs are in the high-impedance state.

Data flow for B-to-A is similar to that of A-to-B but uses OEBA, LEBA and CPBA. The output enables are complimentary (OEAB is active HIGH, and OEBA is active LOW).

Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 18-bit bidirectional bus interface
  • 3-state buffers
  • Output capability: +64 mA and -32 mA
  • TTL input and output switching levels
  • Input and output interface capability to systems at 5 V supply
  • Bus-hold data inputs eliminate the need for external pull-up resistors to hold unused inputs
  • Live insertion/extraction permitted
  • Power-up reset
  • Power-up 3-state
  • No bus current loading when output is tied to 5 V bus
  • Negative edge-triggered clock inputs
  • Latch-up protection:
    • JESD78: exceeds 500 mA
  • ESD protection:
    • MIL STD 883 Method 3015: exceeds 2000 V
    • CDM JESD22-C101-C exceeds 1000 V

Applications

參數(shù)類(lèi)型

型號(hào) Package name
74LVT16500ADGG TSSOP56

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVT16500ADGG 74LVT16500ADGG,112
(935203020112)
Obsolete LVT16500A Standard Procedure Standard Procedure SOT364-1
TSSOP56
(SOT364-1)
SOT364-1 SSOP-TSSOP-VSO-WAVE
暫無(wú)信息
74LVT16500ADGG,118
(935203020118)
Obsolete LVT16500A Standard Procedure Standard Procedure SOT364-1_118
74LVT16500ADGGS
(935203020512)
Obsolete LVT16500A Standard Procedure Standard Procedure 暫無(wú)信息
74LVT16500ADGGY
(935203020518)
Obsolete LVT16500A Standard Procedure Standard Procedure 暫無(wú)信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74LVT16500ADGG 74LVT16500ADGG,112 74LVT16500ADGG rohs rhf rhf
74LVT16500ADGG 74LVT16500ADGG,118 74LVT16500ADGG rohs rhf rhf
74LVT16500ADGG 74LVT16500ADGGS 74LVT16500ADGG rohs rhf rhf
74LVT16500ADGG 74LVT16500ADGGY 74LVT16500ADGG rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (7)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
74LVT16500A 3.3 V 18-bit universal bus transceiver; 3-state Data sheet 2006-05-28
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22
lvt16500a lvt16500a IBIS model IBIS model 2013-04-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT364-1 plastic, thin shrink small outline package; 56 leads; 0.5 mm pitch; 14 mm x 6.1 mm x 1.2 mm body Package information 2022-06-23
lvt16 lvt16 Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
lvt16500a lvt16500a IBIS model IBIS model 2013-04-09
lvt16 lvt16 Spice model SPICE model 2013-05-07
SOT364-1 3D model for products with SOT364-1 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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