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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

74ALVCH16823DL

18-bit bus-interface D-type flip-flop with reset and enable; 3-state

The 74ALVCH16823 is an 18-bit edge-triggered flip-flop featuring separate D-type inputs for each flip-flop and 3-state outputs for bus oriented applications. Incorporates bushold data inputs which eliminate the need for external pull-up resistors to hold unused inputs. The 74ALVCH16823 consists of two sections of nine edge-triggered flip-flops. A clock (nCP) input, an output-enable (nOE) input, a master reset (nMR) input and a clock-enable (nCE) input are provided for each total 9-bit section.

With the clock-enable (nCE) input LOW, the D-type flip-flops will store the state of their individual nDn-inputs that meet the set-up and hold time requirements on the LOW?-?to?-?HIGH nCP transition. Taking nCE HIGH disables the clock buffer, thus latching the outputs. Taking the master reset (nMR) input LOW causes all the nQn outputs to go LOW independently of the clock.

When nOE is LOW, the contents of the flip-flops are available at the outputs. When the nOE is HIGH, the outputs go to the high impedance OFF-state. Operation of the nOE input does not affect the state of flip-flops.

Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low-power consumption

  • Direct interface with TTL levels

  • Current drive ± 24 mA at 3.0 V

  • MULTIBYTE? flow-through standard pin-out architecture

  • Low inductance multiple VCC and GND pins for minimum noise and ground bounce

  • Output drive capability 50 ? transmission lines at 85°C

  • All data inputs have bushold

  • Complies with JEDEC standard no. 8-1A

  • Complies with JEDEC standards:

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 Package name
74ALVCH16823DL SSOP56

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74ALVCH16823DL 74ALVCH16823DL,112
(935259020112)
Obsolete ALVCH16823 Standard Procedure Standard Procedure SOT371-1
SSOP56
(SOT371-1)
SOT371-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無信息
74ALVCH16823DL,118
(935259020118)
Obsolete ALVCH16823 Standard Procedure Standard Procedure 暫無信息
74ALVCH16823DL,512
(935259020512)
Obsolete ALVCH16823 Standard Procedure Standard Procedure 暫無信息
74ALVCH16823DL,518
(935259020518)
Obsolete ALVCH16823 Standard Procedure Standard Procedure 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74ALVCH16823DL 74ALVCH16823DL,112 74ALVCH16823DL rhf
74ALVCH16823DL 74ALVCH16823DL,118 74ALVCH16823DL rhf
74ALVCH16823DL 74ALVCH16823DL,512 74ALVCH16823DL rohs rhf rhf
74ALVCH16823DL 74ALVCH16823DL,518 74ALVCH16823DL rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (6)

文件名稱 標題 類型 日期
74ALVCH16823 18-bit bus-interface D-type flip-flop with reset and enable; 3-state Data sheet 2024-07-09
alvch16823 alvch16823 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT371-1 plastic, shrink small outline package; 56 leads; 0.635 mm pitch; 18.45 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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模型

文件名稱 標題 類型 日期
alvch16823 alvch16823 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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