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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

Input Polarity Protected, Low IQ Ideal Diode evaluation board (NID5100)

The NEVB-NID5100 evaluation board is a two-layer PCB equipped with two NID5100 ideal diodes. It allows users to explore the device's behavior under various application conditions like:
OR-ing two supplies, reverse polarity protection, reverse current blocking and ORing with an external Mosfet

Key features & benefits

•    Input operating voltage range (VIN) 1.2V to 5.5V
•    Continuous output current 1.5A
•    Three supply inputs
•    Two additional USB-C supply inputs
•    Access to all device pins
•    Use case selection by means of jumpers 
 

板上的產(chǎn)品 (2)

Type number Description Status Quick access
NID5100GW 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production
NID5100GW-Q100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production

板上的產(chǎn)品 (2)

Type number Description Status Quick access
NID5100GW 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production
NID5100GW-Q100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production

文檔 (1)

文件名稱 標(biāo)題 類型 日期
UM90040 NID5100, 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode evaluation board User manual 2024-07-25
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