General description
主要特性和優(yōu)勢
Features and benefits
- Large heat sink for high thermal power capability
- Small 3.3 x 3.3 mm footprint
- Low height of only 0.8 mm
- Optimized for a consumer grade application profile
- Low spiking and ringing for low EMI designs
- Voltage range VDS 25 - 30 V
- Low QG and QGD for super-fast switching
- Low RDSon down to 6 mΩ and ID up to 13 A
- Logic-level compatible drive voltage
- Power dissipation (Ptot) of up to 4.8 W
關(guān)鍵應(yīng)用
Applications
- Low RDSon load switching for e.g. smartphones
- DC-to-DC conversion
- Battery management
- Charging devices
- Solid state / hard drives
Parametric search
MLPAK33 MOSFETs
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Products
MOSFETs
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| PXP8R3-20QX | 20 V, P-channel Trench MOSFET | Production | |
| PXN7R7-25QL | 25 V, N-channel Trench MOSFET | Production | |
| PXN8R3-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXP700-150QS | 150 V, P-channel Trench MOSFET | Production | |
| PXN6R2-25QL | 25 V, N-channel Trench MOSFET | Production | |
| PXP1500-100QS | 100 V, P-channel Trench MOSFET | Production | |
| PXP020-20QX | 20 V, P-channel Trench MOSFET | Production | |
| PXN6R7-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXP018-20QX | 20 V, P-channel Trench MOSFET | Production | |
| PXP013-30QL | 30 V, P-channel Trench MOSFET | Production | |
| PXN010-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXP3R7-12QU | 12 V, P-channel Trench MOSFET | Production | |
| PXP400-100QS | 100 V, P-channel Trench MOSFET | Production | |
| PXP011-20QX | 20 V, P-channel Trench MOSFET | Production | |
| PXP9R1-30QL | 30 V, P-channel Trench MOSFET | Production | |
| PXN018-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXN4R7-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXP015-30QL | 30 V, P-channel Trench MOSFET | Production | |
| PXN5R4-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXN9R0-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXN017-30QL | 30 V, N-channel Trench MOSFET | Production | |
| PXP6R1-30QL | 30 V, P-channel Trench MOSFET | Production | |
| PXP012-30QL | 30 V, P-channel Trench MOSFET | Production | |
| PXN014-100QE | 100 V, N-channel Trench MOSFET | Production | |
| PXN012-60QL | N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
| PXP010-20QX | 20 V, P-channel Trench MOSFET | EndOfLife | |
| PXP018-30QL | 30 V, P-channel Trench MOSFET | EndOfLife | |
| PXN011-100QL | N-channel 100 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
| PXN011-100QS | N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
| PXN040-100QS | N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
| PXN020-100QS | N-channel 100 V, 20 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
| PXN028-100QL | N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
| PXN012-100QS | N-channel 100 V, 12 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
| PXN012-100QL | N-channel 100 V, 12 mOhm, logic level Trench MOSFET in MLPAK33 | Production |
Documentation
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| AN11304.pdf | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN11119.pdf | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN11599.pdf | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN10441.pdf | Level shifting techniques in I2C-bus design | Application note | 2020-02-11 |
| AN90017.pdf | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN11156.pdf | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| RS3472_RS2943_MLPAK33_Combi.png | MLPAK33 (SOT8002-2) Combi | Marcom graphics | 2021-04-21 |
| vp_MLPAK33_MOSFETs.zip | MLPAK33 MOSFETs | Value proposition | 2021-04-21 |
| SOT8002_1.step | 3D model for products with SOT8002-1 package | Design support | 2021-04-30 |
| AN50005.pdf | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN90032.pdf | Low temperature soldering, application study | Application note | 2022-02-22 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN10273.pdf | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN11160.pdf | Designing RC Snubbers | Application note | 2024-10-21 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2025-02-10 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
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